Wendian (Leo) Shi

 

 

 

 

 

 

136-93 Caltech
Moore Laboratory
Pasadena, CA 91125
U.S.A.


E-mail: wendian at mems dot Caltech dot edu
phone: (626) 395-2227
Cell: (626) 616-6763

Fax: (626) 584-9104
Office: Moore 47

 

 


Education
    

  • B.S. Microelectronics, Peking University , 2000 - 2004 
  • M.S. Microelectronics & Solid State Electronics, 2004 - 2007
  • M.S. Electrical Engineering, California Institute of Technology, 2007                   

Research Experiences

  • MEMS Research Center, EECS School, Peking University, 2004 – 2007
    Research on electro-thermo actuated RF micro switch, directed by Prof. Zhihong Li. Research on modifying residual stress in Si3N4 film, directed by Prof. Haixia Zhang & Prof. Zhihong Li.

Publication

[1] W. Shi, H. Zhang, S. Wang, G. Zhang and Z. Li, “Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation,” in Proc. 13th IEEE Int. Conf. on Solid-State Sensors, Actuators and Microsystems (Transducers’05), Jun. 2005, vol. 1, pp. 824-827.

 

[2] W. Shi, H. Zhang, G. Zhang, and Z. Li, “Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation,” Sensors & Actuators A: Physical, vol. 130-131, pp. 352-357, 2006

 

[3] W. Shi, Norman C. Tien, and Z. Li, “A highly reliable lateral MEMS switch utilizing undoped polysilicon as isolation material,” accepted to be published in Journal of Microelectromechanical Systems, May 2007.

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