• California Institute of Technology (Pasadena, CA, USA)
  Sep. 2006 ~ Present
  M.S., Electrical Engineering: Expected June 2008
   
•  Korea University (Seoul, Korea)
  Mar. 1999 ~ Feb. 2001  
  M.S., Chemistry
   
• Korea University (Seoul, Korea)
  Sep. 1997 ~ Feb. 1999
  B.S, Chemistry
   
•  Hanyang University (Seoul, Korea)
  Mar. 1991 ~ Aug. 1997      

Research

 Samsung Electronics Co. Ltd. (Suwon, Korea)

Feb. 2001 ~ Dec. 2002

Optoelectronics Division, Telecommunication Network Business

 Samsung Electronics Co. Ltd. (Suwon, Korea)

Dec. 2002 ~ Present

Telecommunication R&D center, Telecommunication Network Business

          -        10Gbps 40km EML(Electro-absorption Modulated Laser diode)

-       10Gbps 80km AML(Amplifier integrated EML)

-       2.5Gbps Short reach SSC LD(Spot Size Converted Laser Diode)

Honors and Awards

 Photonic Conference Korea 2003 Best Paper Award

Nov. 2004

 Samsung Electronics academic-industrial fellowship

Aug. 2005

Publication

•  Attenuation inner-window in the amplifier- and modulator-integrated laser diode, Quantum Electronics, IEEE Journal of, V40, 12, P1631-1633
   

•  Monitor-photodiode integration in the amplifier- and modulator-integrated DFB laser diode, V16, 8, P1933-1935
   

•  Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission, Selected Topics in Quantum Electronics, IEEE Journal of, V11, 1, p135-140
   

•  Design of amplifier- and modulator-integrated laser diode for 10-Gb/s 80-km transmission, Selected Topics in Quantum Electronics, IEEE Journal of, V11,2, p323-328
   

•  Investigation of optical feedback in high-speed electroabsorption modulated lasers with a window region, Photonics Technology Letters, IEEE, V17,4, p777-779
   

•  High kL tapered stripe structure for reducing the adiabatic chirp of EML, Photonic Conference Korea 2003, pp.377-378
   

•  InGaAsP SSC LD for low cost uncooled FTTH module with bandwidth over 4GHz, Indium Phosphide and Related Materials, 2005. International Conference on, p543-546

Patents

• Window adapted wide range gain laser WDM transceiver, filed with Korea Patent Office No, P2005-0045839
   

• Laser diode chip adapted facet coating unchangeable under adoption of Index-matching gel, filed with Korea Patent Office No. P2005-0000578
   

• Band-gap modulated spot size converter integrated LD, filed with Korea Patent Office No. P2005-0004992 
   

•  Scriber adapter for scribing, cleaving process, filed with Korea Patent Office No. P2004-0004674
   

•  Jig for laser diode facet AR/HR coating, registered with Korea Patent Office No . P0487214   
   

•  Manual aligner for laser diode bar for alignment and attachment, registered with Korea Patent Office No. P0421133
   

•  The photonic integrated circuit device using diffusion of p type dopant, filed with U.S. Patent Office. No 792621
   

•  Integration method of monitor photo-detector embedded within window structure of semiconductor photonic devices, filed with U.S. Patent Office. No 792621
   

•  Electro-Absorptive optical modulator having monolithic integrated photo detector, filed with U.S. Patent Office. No. 837,938
   

•  Fabrication of photonic integrated circuit by using a reverse mesa structure, filed with U.S. Patent Office. No 991,614
   

•  Etching indicator for active mesa width control in laser diode, filed with U.S. Patent Office. No 222,136 
   

•  LD Chip align key for passive bonding, filed with U.S. Patent Office. No 217,015        
   

•  Gain coupled DFB LD with dielectric current modulating grating, filed with Korea Patent Office No. P2004-0097126
   

•  Methods of coplanar flip-chip bonding in intra-cavity contacted VCSEL, filed with Korea Patent Office